On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field
Identifieur interne : 001F72 ( Main/Exploration ); précédent : 001F71; suivant : 001F73On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field
Auteurs : M. Mondal [Inde] ; A. Ghoshal [Inde] ; K. P. Ghatak [Inde]Source :
- Il Nuovo Cimento D [ 0392-6737 ] ; 1992-01-01.
English descriptors
- KwdEn :
- Teeft :
- Bulk specimens, Circular plot, Conduction, Conduction band, Conduction electrons, Corresponding results, Dispersion relation, Electric quantization, Electron concentration, Electron transport, Electronic properties, Energy spectrum, Film thickness, Ghatak, Kane, Kane model, Lett, Numerical computation, Numerical computations, Parabolic, Parabolic energy bands, Pergamon press, Phys, Quantum, Same dependence, Semiconductor, Status solidi, Surface electron concentration, Thermoelectric, Thermoelectric power, Unit volume, Valence bands, Various types, Zone centre.
Abstract
Summary: An attempt is made to study the thermoelectric power of the carriers in quantum well of A 3 II B 2 V semiconductors, taking Cd3As2 quantum well as an example. It is found, on the basis of newly derived 2DE−k s dispersion relation by including various types of anisotropies in the energy spectrum that the thermoelectric power decreases with increasing electron concentration and decreasing film thickness respectively. In addition, the corresponding well-known results for bulk specimens of isotropic parabolic energy bands are also obtained from the expressions derived.
Url:
DOI: 10.1007/BF02455345
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<record><TEI wicri:istexFullTextTei="biblStruct"><teiHeader><fileDesc><titleStmt><title xml:lang="en">On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field</title><author><name sortKey="Mondal, M" sort="Mondal, M" uniqKey="Mondal M" first="M." last="Mondal">M. Mondal</name></author><author><name sortKey="Ghoshal, A" sort="Ghoshal, A" uniqKey="Ghoshal A" first="A." last="Ghoshal">A. Ghoshal</name></author><author><name sortKey="Ghatak, K P" sort="Ghatak, K P" uniqKey="Ghatak K" first="K. P." last="Ghatak">K. P. Ghatak</name></author></titleStmt><publicationStmt><idno type="wicri:source">ISTEX</idno><idno type="RBID">ISTEX:13F2EABCFB889D829AD5331EBC038D58B07D0BBE</idno><date when="1992" year="1992">1992</date><idno type="doi">10.1007/BF02455345</idno><idno type="url">https://api.istex.fr/ark:/67375/1BB-0KPPPL80-6/fulltext.pdf</idno><idno type="wicri:Area/Istex/Corpus">000C64</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Corpus" wicri:corpus="ISTEX">000C64</idno><idno type="wicri:Area/Istex/Curation">000C64</idno><idno type="wicri:Area/Istex/Checkpoint">000D23</idno><idno type="wicri:explorRef" wicri:stream="Istex" wicri:step="Checkpoint">000D23</idno><idno type="wicri:doubleKey">0392-6737:1992:Mondal M:on:the:thermoelectric</idno><idno type="wicri:Area/Main/Merge">002068</idno><idno type="wicri:Area/Main/Curation">001F72</idno><idno type="wicri:Area/Main/Exploration">001F72</idno></publicationStmt><sourceDesc><biblStruct><analytic><title level="a" type="main" xml:lang="en">On the thermoelectric power in quantum well of A 3 II B 2 V semiconductors in the presence of a classically large magnetic field</title><author><name sortKey="Mondal, M" sort="Mondal, M" uniqKey="Mondal M" first="M." last="Mondal">M. Mondal</name><affiliation wicri:level="1"><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, Y. S. Palpara College, Palpara, 721458, Midnapore, West Bengal</wicri:regionArea><wicri:noRegion>West Bengal</wicri:noRegion></affiliation></author><author><name sortKey="Ghoshal, A" sort="Ghoshal, A" uniqKey="Ghoshal A" first="A." last="Ghoshal">A. Ghoshal</name><affiliation wicri:level="1"><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Electronics and Telecomunication Engineering, Faculty of Engineering and Technology, University of Jadavpur, 700 032, Calcutta</wicri:regionArea><wicri:noRegion>Calcutta</wicri:noRegion></affiliation></author><author><name sortKey="Ghatak, K P" sort="Ghatak, K P" uniqKey="Ghatak K" first="K. P." last="Ghatak">K. P. Ghatak</name><affiliation wicri:level="1"><country xml:lang="fr">Inde</country><wicri:regionArea>Department of Physics, Y. S. Palpara College, Palpara, 721458, Midnapore, West Bengal</wicri:regionArea><wicri:noRegion>West Bengal</wicri:noRegion></affiliation></author></analytic><monogr></monogr><series><title level="j">Il Nuovo Cimento D</title><title level="j" type="abbrev">Il Nuovo Cimento D</title><idno type="ISSN">0392-6737</idno><imprint><publisher>Kluwer Academic Publishers</publisher><pubPlace>Dordrecht</pubPlace><date type="published" when="1992-01-01">1992-01-01</date><biblScope unit="volume">14</biblScope><biblScope unit="issue">1</biblScope><biblScope unit="page" from="63">63</biblScope><biblScope unit="page" to="73">73</biblScope></imprint><idno type="ISSN">0392-6737</idno></series></biblStruct></sourceDesc><seriesStmt><idno type="ISSN">0392-6737</idno></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Conductivity phenomena in semiconductors and insulators</term></keywords><keywords scheme="Teeft" xml:lang="en"><term>Bulk specimens</term><term>Circular plot</term><term>Conduction</term><term>Conduction band</term><term>Conduction electrons</term><term>Corresponding results</term><term>Dispersion relation</term><term>Electric quantization</term><term>Electron concentration</term><term>Electron transport</term><term>Electronic properties</term><term>Energy spectrum</term><term>Film thickness</term><term>Ghatak</term><term>Kane</term><term>Kane model</term><term>Lett</term><term>Numerical computation</term><term>Numerical computations</term><term>Parabolic</term><term>Parabolic energy bands</term><term>Pergamon press</term><term>Phys</term><term>Quantum</term><term>Same dependence</term><term>Semiconductor</term><term>Status solidi</term><term>Surface electron concentration</term><term>Thermoelectric</term><term>Thermoelectric power</term><term>Unit volume</term><term>Valence bands</term><term>Various types</term><term>Zone centre</term></keywords></textClass><langUsage><language ident="en">en</language></langUsage></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Summary: An attempt is made to study the thermoelectric power of the carriers in quantum well of A 3 II B 2 V semiconductors, taking Cd3As2 quantum well as an example. It is found, on the basis of newly derived 2DE−k s dispersion relation by including various types of anisotropies in the energy spectrum that the thermoelectric power decreases with increasing electron concentration and decreasing film thickness respectively. In addition, the corresponding well-known results for bulk specimens of isotropic parabolic energy bands are also obtained from the expressions derived.</div></front></TEI><affiliations><list><country><li>Inde</li></country></list><tree><country name="Inde"><noRegion><name sortKey="Mondal, M" sort="Mondal, M" uniqKey="Mondal M" first="M." last="Mondal">M. Mondal</name></noRegion><name sortKey="Ghatak, K P" sort="Ghatak, K P" uniqKey="Ghatak K" first="K. P." last="Ghatak">K. P. Ghatak</name><name sortKey="Ghoshal, A" sort="Ghoshal, A" uniqKey="Ghoshal A" first="A." last="Ghoshal">A. Ghoshal</name></country></tree></affiliations></record>Pour manipuler ce document sous Unix (Dilib)
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